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| BSZ100N06LS3 G OptiMOS 3 Power-Transistor TM Features * Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * N-channel, logic level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Halogen-free according to IEC61249-2-21 Type BSZ100N06LS3 G Product Summary V DS R DS(on),max ID 60 10 20 V m A Package Marking PG-TSDSON-8 100N06L Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C2) V GS=10 V, T C=100 C V GS=4.5 V, T C=25 C V GS=4.5 V, T C=100 C V GS=10 V, T A=25 C, R thJA=60 K/W 3) Pulsed drain current4) Avalanche energy, single pulse5) Gate source voltage 1) 2) 3) Value 20 20 20 20 Unit A 11 80 55 20 mJ V I D,pulse E AS V GS T C=25 C I D=20 A, R GS=25 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=2.5 K/W the chip is able to carry 55 A. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information See figure 13 for more detailed information 4) 5) Rev. 2.3 page 1 2009-11-11 BSZ100N06LS3 G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=60 K/W 3) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 50 2.1 -55 ... 150 55/150/56 C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=23 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=20 A V GS=10 V, I D=20 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=20 A 60 1.2 1.7 0.1 2.2 1 A V 2.5 60 K/W 20 10 10 11.6 7.7 1.3 41 100 100 17.9 10 S nA m Rev. 2.3 page 2 2009-11-11 BSZ100N06LS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=20 A, R G=3 V GS=0 V, V DS=30 V, f =1 MHz - 2600 500 24 8 58 19 8 3500 660 - pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Qg Q oss V DD=30 V, I D=20 A, V GS=0 to 10 V V DD=30 V, V GS=0 V V DD=30 V, I D=20 A, V GS=0 to 4.5 V - 8 4 3 7 15 3.3 34 25 20 45 33 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=20 A, T j=25 C V R=30 V, I F=20A, di F/dt =100 A/s - 0.9 30 27 20 80 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.3 page 3 2009-11-11 BSZ100N06LS3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 60 25 50 20 40 15 P tot [W] 30 I D [A] 10 5 0 0 50 100 150 200 0 50 100 150 200 20 10 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 limited by on-state resistance 102 10 s 1 s 100 Z thJC [K/W] 0.5 100 s 0.2 I D [A] 10 1 1 ms 10 ms DC 0.1 0.05 10-1 0.02 0.01 single pulse 100 10-1 10 -1 10-2 10 0 10 1 10 2 10-6 10-5 10-4 10-3 t p [s] 10-2 10-1 100 V DS [V] Rev. 2.3 page 4 2009-11-11 BSZ100N06LS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 80 10 V 6 V 5V 4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 24 22 20 3.2 V 3.5 V 4V 70 60 4V 18 16 R DS(on) [m] 50 14 12 10 8 4.5 V I D [A] 40 5V 6V 10 V 30 3.5 V 20 3.2 V 6 4 10 3V 2 0 0 1 2 3 0 0 20 40 60 80 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 80 8 Typ. forward transconductance g fs=f(I D); T j=25 C 100 80 60 60 40 g fs [S] 40 20 150 C 25 C I D [A] 20 0 0 1 2 3 4 5 0 0 20 40 60 80 V GS [V] I D [A] Rev. 2.3 page 5 2009-11-11 BSZ100N06LS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=20 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS paramter: ID 20 18 16 14 2 230 A 2.5 R DS(on) [m] 12 10 8 6 4 2 0 -60 -20 20 60 100 140 180 max V GS(th) [V] 1.5 23 A typ 1 0.5 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 100 103 Coss C [pF] 102 Crss I F [A] 10 150 C 25 C 101 150 C, max 25 C, max 0 20 40 60 1 0.0 0.5 1.0 1.5 V DS [V] V SD [V] Rev. 2.3 page 6 2009-11-11 BSZ100N06LS3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=20 A pulsed parameter: V DD 12 30 V 10 12 V 48 V 8 10 125 C 100 C 25 C V GS [V] 1000 I AV [A] 6 4 2 1 1 10 100 0 0 10 20 30 40 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 70 V GS Qg 60 V BR(DSS) [V] V g s(th) 50 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 40 T j [C] Rev. 2.3 page 7 2009-11-11 BSZ100N06LS3 G Package Outline PG-TSDSON-8 Rev. 2.3 page 8 2009-11-11 BSZ100N06LS3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 9 2009-11-11 |
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